Atomic resolution on the Si (5 5 12) surface
(Result of the month 03/2010)

The present image has been obtained during sequential desorption of oxygen from Si(5 5 12) surface. During the process the surface was annealed to different temperatures for 5-10 seconds and the data was acquired. At about 1000°C, we observed facets with an atomic resolution on this surface, where we assume that at this temperature the oxygen is not fully desorbed, due to which a local change in the surface has been observed resulted in the observation of facets with the exposure of Si (111)-7x7 type of reconstruction. The electronic structure revealed earlier ¹ has also suggested that the Si (5 5 12) surface is composed of Si(001) and Si(111) like features. Further analysis of this result is underway. The present image has acquired the empty states of the surface with bias voltage of V_b =1.5 V and I_t=200 pA

Authors:
Mahesh Kumar¹, S.M. Shivaprasad²

Institutes:
⁽¹⁾Surface Physics and Nanostructurtes Group, National Physical Laboratory New Delhi, INDIA.
⁽²⁾ CPMU/ICMS, Jawaharlal Nehru Centre for Advanced Scientific Research, Bangalore INDIA.

Institute web-pages:
www.nplindia.org
http://surfacephysics.googlepages.com/maheshkumar

Literature:
⁽¹⁾M. Kumar, Govind, V.K. Paliwal and S.M. Shivaprasad,
Adsorption induced faceting and superstructural phase diagram of the Sb/Si (5 5 12) interface
Surface Science 600 (2006) 2745.

This result has been obtained with :
Variable Temperature UHV SPM

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